Electronic Instrumentation (EI), Department of Microelectronics
Expertise: High accuracy integrated frequency referencesThemes: Cryogenic & Precision Electronics, Precision Analog
Çağrı Gürleyük was born in Istanbul, Turkey in 1987. He obtained his B.Sc. and M.Sc. degrees in Electronics Engineering from Istanbul Technical University in 2012 and 2015 respectively. From 2014 to 2016, he was with Analog Devices in Istanbul, Turkey (formerly Hittite Microwave) as a Design Engineer in the High Data Rate group of the RF and Microwave unit. In March 2016, he joined the Electronic Instrumentation Laboratory at TU Delft, working on high accuracy integrated frequency references.
- A CMOS Dual-RC Frequency Reference with ±200-ppm Inaccuracy from −45 °C to 85 °C
Ç. Gürleyük; L. Pedalà; S. Pan; F. Sebastiano; K. A. A. Makinwa;
IEEE Journal of Solid-State Circuits,
Volume 53, Issue 12, pp. 3386-3395, 12 2018. DOI: 10.1109/JSSC.2018.2869083
This paper presents a 7-MHz CMOS RC frequency reference. It consists of a frequency-locked loop in which the output frequency of a digitally controlled oscillator (DCO) is locked to the combined phase shifts of two independent RC (Wien bridge) filters, each employing resistors with complementary temperature coefficients. The filters are driven by the DCO’s output frequency and the resulting phase shifts are digitized by high-resolution phase-to-digital converters. Their outputs are then combined in the digital domain to realize a temperature-independent frequency error signal. This digitally assisted temperature compensation scheme achieves an inaccuracy of ±200 ppm from –45 °C to 85 °C after a two-point trim. The frequency reference draws 430 μA from a 1.8-V supply, while achieving a supply sensitivity of 0.18%/V and a 330-ppb Allan deviation floor in 3 s of measurement time.
- A CMOS Dual-RC frequency reference with±250ppm inaccuracy from− 45° C to 85° C
C. Gürleyük; L. Pedala; F. Sebastiano; K.A.A. Makinwa;
In Dig. Techn. Papers IEEE International Solid-State Circuits Conference (ISSCC),
pp. 54-56, 2 2018. DOI: 10.1109/ISSCC.2018.8310180
Last updated: 18 Jan 2019