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Vahid Mohammadi


Post-Doctoral Researcher

Biography


Vahid Mohammadi was born in 1981. He received his M.Sc. degrees in Electrical and Electronic Engineering from the University of Shiraz, Iran in 2009. During his MSc, he has been fabricated a piezoelectric MEMS pressure sensor based on enhanced thin-film PZT diaphragm containing nanocrystalline powders. In December 2010, he joined the Faculty of Electrical Engineering, Mathematics and Computer Science (EEMCS), Laboratory of Electronic Components, Technology and Materials (ECTM) at the Delft University of Technology, and Delft Institute of Microsystems and Nanoelectronics (DIMES), in the Silicon Device Integration group. His research focused on the characterization and control of the conventional 700°C pure-boron (PureB) CVD deposition and developing a novel 400°C pure-boron process integrated in CMOS compatible silicon detectors and imagers.
Since December 2014, he joined to the department of the Microelectronics at the Delft University of Technology, Laboratory of the Electronic Instrumentation as a post-doc researcher.

Contact


Electronic Instrumentation Laboratory
Delft University of Technology
Faculty of Electrical Engineering, Mathematics and Computer Science
Department of Micro-electronics and Computer Engineering
Mekelweg 4
2628 CD Delft
The Netherlands

Fax: +31 (0)15 27 85755

Email: This email address is being protected from spambots. You need JavaScript enabled to view it.

Publications


Google scholar link: https://scholar.google.com/citations?user=hrT-ipkAAAAJ&hl=en

Book chapters:

  1. V. Mohammadi, S. Nihtianov, “Low-Temperature PureB CVD Technology for CMOS Compatible Photodetectors”, InTech – Chemical Vapor Deposition, book edited by S. Neralla, ISBN 978-953-51-2573-0, Print ISBN 978-953-51-2572-3, Published: August 31, 2016. DOI: http://dx.doi.org/10.5772/63344.
  2. V. Mohammadi, “Piezoelectric Pressure Sensor Based on Enhanced Thin-Film PZT Diaphragm Containing Nanocrystalline Powders”, InTech - Piezoelectrics Materials and Devices - Practice and Applications, book edited by F. Ebrahimi, ISBN 978-953-51-1045-3, Published: February 27, 2012. DOI: http://dx.doi.org/10.5772/54755.

Journal papers

  1. V. Mohammadi and S. Nihtianov, “Lateral gas phase diffusion length of boron atoms over Si/B surfaces during CVD of pure boron layers,” AIP Advances, Vol 6, p.025103, 2016. DOI: http://dx.doi.org/10.1063/1.4941702
  2. L. K. Nanver, L. Qi, V. Mohammadi, K. R. M. Mok, W. B. de Boer, N. Golshani, et al., "Robust UV/VUV/EUV PureB photodiode detector technology with high CMOS compatibility," IEEE Journal of Selected Topics in Quantum Electronics (JSTQE), vol. 20, pp. 1-11, 2014. DOI: http://dx.doi.org/10.1109/JSTQE.2014.2319582
  3. N. Golshani, V. Mohammadi, H. Schellevis, C. I. M. Beenakker, and R. Ishihara, "Reactively sputtered nanometer-thin ZrN film as a diffusion barrier between Al and boron layers for radiation detector applications," APL Materials, vol. 2, p. 100702, 2014. DOI: http://dx.doi.org/10.1063/1.4897959
  4. V. Mohammadi, N. Golshani, K. R. C. Mok, W. B. De Boer, J. Derakhshandeh, and L. K. Nanver, "Temperature dependency of the kinetics of PureB CVD deposition over patterned Si/SiO2 surfaces," Microelectronic Engineering, vol. 125, pp. 45-50, 2014. DOI: http://dx.doi.org/10.1016/j.mee.2014.03.015
  5. K. R. C. Mok, A. H. G. Vlooswijk, V. Mohammadi, and L. K. Nanver, "Effects of annealing on chemical-vapor deposited PureB layers," ECS Journal of Solid State Science and Technology, vol. 2 (9), pp. P413-P417, 2013. DOI: http://dx.doi.org/10.1149/2.044309jss
  6. V. Mohammadi, W. De Boer, T. L. M. Scholtes, and L. K. Nanver, "A simple model describing the kinetic of CVD deposition of pure-boron layers from diborane," ECS Transactions, vol. 45 (31), pp. 57-65, 2013. DOI: http://dx.doi.org/10.1149/04531.0057ecst
  7. V. Mohammadi, W. De Boer, T. L. M. Scholtes, and L. K. Nanver, "Local-loading effects for pure-boron-layer chemical-vapor deposition," ECS Transactions, vol. 50 (4), pp. 333-341, 2013. DOI: http://dx.doi.org/10.1149/05004.0333ecst
  8. V. Mohammadi, Q. Lin, N. Golshani, K. R. C. Mok, W. B. de Boer, A. Sammak, et al., "VUV/low-energy electron Si photodiodes with postmetal 400°C PureB deposition," IEEE Electron Device Letters, vol. 34 (12), pp. 1545-1547, 2013. DOI: http://dx.doi.org/10.1109/LED.2013.2287221
  9. L. K. Nanver, A. Sammak, V. Mohammadi, K. R. C. Mok, L. Qi, A. Šakić, et al., "(Invited) pure dopant deposition of B and Ga for ultrashallow junctions in Si-based devices," ECS Transactions, vol. 49 (1), pp. 25-33, 2012. DOI: http://dx.doi.org/10.1149/04901.0025ecst
  10. V. Mohammadi, W. De Boer, T. L. Scholtes, and L. K. Nanver, "Pattern dependency of pure-boron-layer chemical-vapor depositions," ECS Transactions, vol. 45 (6),  pp. 39-48, 2012. DOI: http://dx.doi.org/10.1149/1.3700937
  11. V. Mohammadi, W. B. De Boer, T. L. M. Scholtes, and L. K. Nanver, "Pattern dependency and loading effect of pure-boron-layer chemical-vapor deposition," ECS Journal of Solid State Science and Technology, vol. 1 (1), pp. Q16-Q20, 2012. DOI: http://dx.doi.org/10.1149/2.024201jss
  12. V. Mohammadi, W. B. De Boer, and L. K. Nanver, "An analytical kinetic model for chemical-vapor deposition of PureB layers from diborane," Journal of Applied Physics, vol. 112, 2012. DOI: http://dx.doi.org/10.1063/1.4767328
  13. V. Mohammadi, W. B. De Boer, and L. K. Nanver, "Temperature dependence of chemical-vapor deposition of pure boron layers from diborane," Applied Physics Letters, vol. 101, 2012. DOI: http://dx.doi.org/10.1063/1.4752109
  14. V. Mohammadi, M. H. Sheikhi, “Design, Modeling and Optimization of a Multilayer Thin-Film PZT Membrane Used in Pressure Sensor”, International Journal of Engineering and Applied Sciences (IJEAS), vol.1, issue 4, pp. 27-38, 2009.

Conference / Workshop Proceedings

  1. V. Mohammadi, R. W. E. van de Kruijs, P. Rao, S. Nihtianov, “Influence of the Surface Oxide Content of a Boron Capping Layer on UV Photodetector Performance,” in Proc. 9th Int. conference on Sensing Technology (ICST), 8-10 Dec. 2015, Auckland, New Zealand. DOI: http://dx.doi.org/10.1109/ICSensT.2015.7438479
  2. V. Mohammadi, S. Nihtianov, “Low temperature, 400 ⁰C, pure boron deposition: a solution for integration of high-performance Si photodetectors and CMOS circuits”, Proc. IEEE Sensors'15, November 1-4, Busan, South Korea, 2015, pp. 1-4. DOI: http://dx.doi.org/10.1109/ICSENS.2015.7370555
  3. V. Mohammadi, P.R. Rao, R.W.E. van de Kruijs, S. Nihtianov, “Surface oxide content examination of capping boron layers in UV photodetectors”, IEEE 73rd Device Research Conference (DRC), Ohio, USA, pp. 73-74, 21-24 June, 2015, DOI: http://dx.doi.org/10.1109/DRC.2015.7175562
  4. V. Mohammadi, L. Shi, U. Kroth, C. Laubis, and S. Nihtianov, "Stability Characterization of High-Performance PureB Si-Photodiodes under Aggressive Cleaning Treatment in Industrial Applications," in Proc. IEEE Int. Conference on Industrial Technology (ICIT), 17-19 March 2015, Seville, Spain pp. 3370-3376. DOI: http://dx.doi.org/10.1109/ICIT.2015.7125599
  5. V. Mohammadi, S. Mohammadi, S. Ramesh, S. Nihtianov, “Numerical Gas Flow and Heat Transfer Simulation in the ASM Epsilon 2000 CVD reactor for Pure Boron Deposition”, Int. conf. Electronics-ET’14, September 11-13,  Sozopol, Bulgaria, published in: Annual Journal of Electronics,  ISSN 1314-0078, 2014, pp. 28-31.
  6. V. Mohammadi, S. Ramesh, and L. K. Nanver, "Thickness evaluation of deposited PureB layers in micro-/millimeter-sized windows to Si," in Proc. Int. Conference on Microelectronic Test Structures (ICMTS), 24-27 Mar. 2014, Udine, Italy, pp. 194-199. DOI: http://dx.doi.org/10.1109/ICMTS.2014.6841492
  7. V. Mohammadi, N. Golshani, K. R. C. Mok, W. D. De Boer, J. Derakhshandeh, and L. K. Nanver, "Issues arising from lowering the deposition temperature of PureB-layers on Si/SiO2 surfaces," ICT.Open: Micro Technology and Micro Devices (SAFE), 27-28 Nov. 2013, Eindhoven, The Netherlands,.
  8. V. Mohammadi and L. K. Nanver, "PureB photodetector technology research for application in detectors/imagers for the whole electromagnetic spectrum," STW Annual Congress, 3 Oct. 2013, Nieuwegein, The Netherlands.
  9. N. Golshani, V. Mohammadi, S. Ramesh, and L. K. Nanver, "High-ohmic resistors using nanometer-thin pure-boron chemical-vapour-deposited layers," in Proc. 43th IEEE European Solid-State Device Research Conference (ESSDERC), 16-20 Sept. 2013, Bucharest, Romania, pp. 210-213.
  10. V. Mohammadi, et.al., "Temperature dependency of the kinetics of PureB CVD deposition over patterned Si/SiO2 surfaces," in Proc. E-MRS 2013 Fall Meeting. Symposium A "Alternative Semiconductor Integration in Si Microelectronics: Materials, Techniques & Applications", 16-20 Sept. 2013, Warsaw, Poland.
  11. V. Mohammadi, L. Shi, S. Nihtianov, and L. K. Nanver, "High performance PureB-photodiodes for DUV, VUV and EUV spectral ranges," The Sense of Contact 15, 10 Apr. 2013, Kontakt der Kontinenten, Soesterberg, The Netherlands.
  12. V. Mohammadi, W. D. De Boer, T. L. M. Scholtes, and L. K. Nanver, "Impact of the process and chamber parameters on CVD deposition of PureB layer," ICT.Open: Micro Technology and Micro Devices (SAFE), 22-23 Oct. 2012, WTC, Rotterdam, The Netherlands.
  13. L. K. Nanver, A. Sammak, A. Sakic, V. Mohammadi, J. Derakhshandeh, K. R. C. Mok, et al., "Applications of PureB and PureGaB ultrashallow junction technologies," in Proc. 11th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT), 29 Oct.-1 Nov. 2012, Xi'an, China, pp. 1-4. DOI: http://dx.doi.org/10.1109/ICSICT.2012.6467697
  14. V. Mohammadi, W. De Boer, T. L. M. Scholtes, and L. K. Nanver, "Local-loading effects for pure-boron-layer chemical-vapor deposition," in Proc. 222nd ECS Meeting (PRiME), Oct. 7-12 2012, Honolulu, HI, USA.
  15. K. R. C. Mok, V. Mohammadi, L. K. Nanver, and W. D. de Boer, "Low-pressure chemical vapor deposition of PureB layers on silicon for p+n junction formation," in Proc. 12th Int. Workshop on Junction Technology (IWJT), 14-15 May 2012, Shanghai, China, pp. 113-116. DOI: http://dx.doi.org/10.1109/IWJT.2012.6212822
  16. V. Mohammadi, W. De Boer, T. L. M. Scholtes, and L. K. Nanver, "Pattern dependency of pure-boron-layer chemical-vapor depositions," in Proc. 221st ECS Meeting, 6 -10 May 2012, Seattle, WA.
  17. V. Mohammadi, W. De Boer, T. L. M. Scholtes, and L. K. Nanver, "A kinetic model for chemical-vapor deposition of pure-boron layers from diborane," in Proc. 221st ECS Meeting, 6-10 May 2012, Seattle, WA, USA.
  18. V. Mohammadi, W. D. De Boer, T. L. M. Scholtes, A. Sakic, C. Heerkens, and L. K. Nanver, "On the uniformity of pure-boron-layer depositions," ICT.Open: Micro Technology and Micro Devices (SAFE), 14-15 Nov. 2011, Veldhoven, The Netherlands, pp. 1-3.
  19. V. Mohammadi, M. H. Sheikhi, A. Barzegar, S. Mohammadi, “Design, Fabrication and Optimization of the Pressure Sensor Based on PZT Thin Film,” in Proc. 18th Iranian Society of Mechanical Engineers ,ISME2010, Sharif University of Technology, 2010, Tehran, Iran.
  20. Sh. Torkian, A. Barzegar, V. Mohammadi, M. H. Sheikhi, "Fabrication and Characterization of Lead Zirconate Titanate Composite Films via Hybrid Sol-Gel Method,” in Proc. 10th Iranian Seminar on Surface Engineering, Isfahan, Iran, May 2009.
  21. V. Mohammadi, M. H. Sheikhi, S. Torkian, A. Barzegar, E. Masoumi K.A, S. Mohammadi, “Design, Modeling and Optimization of a Piezoelectric Pressure Sensor based on Thin-Film PZT Diaphragm Contain of Nanocrystalline Powders,” in Proc. 6th Int. Symposium on Mechatronics and its Applications (ISMA), Sharjah, UAE, March 2009. DOI: http://dx.doi.org/10.1109/ISMA.2009.5164786
  22. V. Mohammadi, M. H. Sheikhi, E. Masoumi K.A, A. Barzegar, “Design, Modeling and Optimization of a Multilayer Thin-Film PZT Membrane Used in Pressure Sensor” in Proc. 3rd Int. Conference on Modelling, Simulation and Applied Optimization (ICMSAO), Sharjah, U.A.E, January 2009.