[2024-25] Strained Hall effect for high-performance magnetometry

Hall effect devices are the most common type of integrated magnetic sensors, due to their high sensitivity and ease of integration with CMOS electronics. The performance of Hall effect sensors is related to material parameters such as carrier velocity and mobility, which are strongly influenced by strain. The objective is to improve the sensitivity and SNR of Hall devices by artificially inducing strain on the sensing region, which can be accomplished through manufacturing techniques that are employed in standard CMOS technologies.

Assignment

In this project you will:

1. Perform a literature review of Hall devices and strained silicon technology.

2. Simulate the device in COMSOL and/or Sentaurus.

3. Fabricate your design in EKL / Kavli.

4. Characterize the Hall effect device

Requirements

Recommended Background (but not all is required - you can learn in the project!) :

Semiconductor physics

Clean room fabrication

Electrical benchtop testing

Excitement about Magnetic Sensors!

Contact

Last modified: 2024-02-04