prof.dr. Breems

1. A 120-MHz BW, 122-dBFS SFDR CTΔΣ ADC With a Multi-Path Multi-Frequency Chopping Scheme
   Javvaji, Sundeep; Bolatkale, Muhammed; Bajoria, Shagun; Rutten, Robert; Essink, Bert Oude; Beijens, Koen; Makinwa, Kofi A. A.; Breems, Lucien J.;
   IEEE Journal of Solid-State Circuits,
   Volume 59, Issue 4, pp. 1184-1193, 2024. DOI: 10.1109/JSSC.2024.3354574
   
   Keywords: ...

   Quantization (signal);1/f noise;Resistors;Capacitors;Inverters;Clocks;Switches;Analog-to-digital converter (ADC);continuous time (CT);delta–sigma (ΔΣ);multi-path chopping;wideband receiver.

2. A 120-MHz BW, 122-dBFS SFDR CTΔΣ ADC With a Multi-Path Multi-Frequency Chopping Scheme
   Javvaji, Sundeep; Bolatkale, Muhammed; Bajoria, Shagun; Rutten, Robert; Essink, Bert Oude; Beijens, Koen; Makinwa, Kofi A. A.; Breems, Lucien J.;
   IEEE Journal of Solid-State Circuits,
   Volume 59, Issue 4, pp. 1184-1193, 2024. DOI: 10.1109/JSSC.2024.3354574
   
   Keywords: ...

   Quantization (signal);1/f noise;Resistors;Capacitors;Inverters;Clocks;Switches;Analog-to-digital converter (ADC);continuous time (CT);delta–sigma (ΔΣ);multi-path chopping;wideband receiver.

3. A 6GHz Multi-Path Multi-Frequency Chopping CTΔΣ Modulator achieving 122dBFS SFDR from 150kHz to 120MHz BW
   Javvaji, Sundeep; Bolatkale, Muhammed; Bajoria, Shagun; Rutten, Robert; Essink, Bert Oude; Beijens, Koen; Makinwa, Kofi; Breems, Lucien;
   In 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits),
   pp. 1-2, 2023. DOI: 10.23919/VLSITechnologyandCir57934.2023.10185356

4. A High-Linearity and Low-EMI Multilevel Class-D Amplifier
   Zhang, Huajun; Karmakar, Shoubhik; Breems, Lucien J.; Sandifort, Quino; Berkhout, Marco; Makinwa, Kofi A. A.; Fan, Qinwen;
   IEEE Journal of Solid-State Circuits,
   Volume 56, Issue 4, pp. 1176-1185, 2021. DOI: 10.1109/JSSC.2020.3043815

5. A 28-W, −102.2-dB THD+N Class-D Amplifier Using a Hybrid ΔΣM-PWM Scheme
   Karmakar, Shoubhik; Zhang, Huajun; van Veldhoven, Robert; Breems, Lucien J.; Berkhout, Marco; Fan, Qinwen; Makinwa, Kofi A. A.;
   IEEE Journal of Solid-State Circuits,
   Volume 55, Issue 12, pp. 3146-3156, 2020. DOI: 10.1109/JSSC.2020.3023874

6. A −107.8 dB THD+N Low-EMI Multi-Level Class-D Audio Amplifier
   Zhang, Huajun; Karmakar, Shoubhik; Breems, Lucien; Sandifort, Quino; Berkhout, Marco; Makinwa, Kofi; Fan, Qinwen;
   In 2020 IEEE Symposium on VLSI Circuits,
   pp. 1-2, 2020. DOI: 10.1109/VLSICircuits18222.2020.9162793

7. A 28W -108.9dB/-102.2dB THD/THD+N Hybrid $\Delta\Sigma-$-PWM Class-D Audio Amplifier with 91% Peak Efficiency and Reduced EMI Emission
   Karmakar, Shoubhik; Zhang, Huajun; Van Veldhoven, Robert; Breems, Lucien; Berkhout, Marco; Fan, Qinwen; Makinwa, Kofi A.A.;
   In 2020 IEEE International Solid-State Circuits Conference - (ISSCC),
   pp. 350-352, 2020. DOI: 10.1109/ISSCC19947.2020.9063001

8. A 3.2mW SAR-assisted CTSD ADC with 77.5dB SNDR and 40MHz BW in 28nm CMOS
   P. Cenci; M. Bolatkale; R. Rutten; M. Ganzerli; G. Lassche; K. Makinwa; L. Breems;
   In Dig. Techn. Paper IEEE Symposium on VLSI Circuits (VLSI),
   6 2019. DOI: 10.23919/VLSIC.2019.8778176

9. A 3.2mW SAR-assisted CTSD ADC with 77.5dB SNDR and 40MHz BW in 28nm CMOS
   P. Cenci; M. Bolatkale; R. Rutten; M. Ganzerli; G. Lassche; K. Makinwa; L. Breems;
   In Dig. Techn. Paper IEEE Symposium on VLSI Circuits (VLSI),
   pp. C230-C231, 6 2019. DOI: 10.23919/VLSIC.2019.8778176

10. A 28 nm 2 GS/s 5-b Low-latency SAR ADC with gm-boosted StrongARM Comparator
    P. Cenci; M. Bolatkale; R. Rutten; G. Lassche; K. Makinwa; L. Breems;
    In European Solid-State Circuits Conference (ESSCIRC),
    2017. DOI: 10.1109/ESSCIRC.2017.8094553

11. A 28 nm 2 GS/s 5-b Low-latency SAR ADC with gm-boosted StrongARM Comparator
    P. Cenci; M. Bolatkale; R. Rutten; G. Lassche; K. Makinwa; L. Breems;
    In European Solid-State Circuits Conference (ESSCIRC),
    pp. 171-174, 2017. DOI: 10.1109/ESSCIRC.2017.8094553

12. Frequency synthesiser
    Salvatore Drago; Fabio Sebastiano; Domine M.W. Leenaerts; Lucien J. Breems; Bram Nauta;
    Patent, United States 9240772 B2, January 2016.

13. Automatic Common-mode Rejection Calibration
    Fabio Sebastiano; Lucien J. Breems; Raf Roovers;
    Patent, Europe 2195922 B1, March 2015.

14. Mobility-based Time References for Wireless Sensor Networks
    Fabio Sebastiano; Lucien J. Breems; Kofi A.A. Makinwa;
    Springer, , 2013.
    
    Abstract: ...

    This book describes the use of low-power low-cost and extremely small radios to provide essential time reference for wireless sensor networks. The authors explain how to integrate such radios in a standard CMOS process to reduce both cost and size, while focusing on the challenge of designing a fully integrated time reference for such radios. To enable the integration of the time reference, system techniques are proposed and analyzed, several kinds of integrated time references are reviewed, and mobility-based references are identified as viable candidates to provide the required accuracy at low-power consumption. Practical implementations of a mobility-based oscillator and a temperature sensor are also presented, which demonstrate the required accuracy over a wide temperature range, while drawing 51-µW from a 1.2-V supply in a 65-nm CMOS process.

15. Method and system for impulse radio wakeup
    Fabio Sebastiano; Salvatore Drago; Lucien J. Breems; Domine M.W. Leenaerts;
    Patent, United States 8620394 B2, December 2013.

16. Automatic Common-mode Rejection Calibration
    Fabio Sebastiano; Lucien J. Breems; Raf Roovers;
    Patent, United States 8174416, May 2012.

17. Frequency synthesiser
    Salvatore Drago; Fabio Sebastiano; Domine M.W. Leenaerts; Lucien J. Breems; Bram Nauta;
    Patent, China 102369665 A, March 2012.

18. A 4 GHz continuous-time ΔΣ ADC with 70 dB DR and -74 dBFS THD in 125 MHz BW
    M. Bolatkale; L.J. Breems; R. Rutten; K.A.A. Makinwa;
    IEEE Journal of Solid State Circuits,
    Volume 46, Issue 12, pp. 2857-2868, December 2011.

19. A 65-nm CMOS temperature-compensated mobility-based frequency reference for Wireless Sensor Networks
    Fabio Sebastiano; Lucien J. Breems; Kofi Makinwa; Salvatore Drago; Domine M. W. Leenaerts; Bram Nauta;
    {IEEE} J. Solid-State Circuits,
    Volume 46, Issue 7, pp. 1544 - 1552, July 2011. DOI: 10.1109/JSSC.2011.2143630
    
    Keywords: ...

    CMOS integrated circuits;compensation;electron mobility;wireless sensor networks;MOS transistor;current 42.6 muA;electron mobility;mobility-based frequency reference;size 65 nm;temperature -55 degC to 125 degC;temperature-compensated CMOS frequency reference;two-point trim;voltage 1.2 V;wireless sensor networks;Accuracy;Frequency conversion;Oscillators;Temperature;Temperature measurement;Temperature sensors;Wireless sensor networks;CMOS integrated circuits;Charge carrier mobility;MOSFET;crystal-less clock;frequency reference;low voltage;sigma-delta modulation;smart sensors;temperature compensation;temperature sensors;ultra-low power;wireless sensor networks.
    
    
    Abstract: ...

    A temperature-compensated CMOS frequency reference based on the electron mobility in a MOS transistor is presented. Over the temperature range from -55 °C to 125 °C, the frequency spread of the complete reference is less than ±0.5% after a two-point trim and less than ±2.7% after a one-point trim. These results make it suitable for use in Wireless Sensor Network nodes. Fabricated in a baseline 65-nm CMOS process, the 150 kHz frequency reference occupies 0.2 mm² and draws 42.6 µA from a 1.2-V supply at room temperature.

20. A 4GHz CT Delta-Sigma ADC with 70dB DR and -74dBFS THD in 125MHz BW
    M. Bolatkale; L.J. Breems; R. Rutten; K.A.A. Makinwa;
    In A Chandrakasana; W Gass (Ed.), 2011 IEEE International Solid-State Circuits Conference (ISSCC),
    IEEE, pp. 470-472, 2011.

21. Effects of Packaging and Process Spread on a Mobility-Based Frequency Reference in 0.16-µm CMOS
    Fabio Sebastiano; Lucien J. Breems; Kofi Makinwa; Salvatore Drago; Domine M. W. Leenaerts; Bram Nauta;
    In Proc. European Solid-State Circuits Conference,
    Helsinki, Finland, pp. 511 - 514, September12-16 2011. DOI: 10.1109/ESSCIRC.2011.6044934
    
    Keywords: ...

    CMOS integrated circuits;MOSFET;ceramic packaging;electron mobility;low-power electronics;plastic packaging;reference circuits;wireless sensor networks;CMOS process;ceramic packages;electron mobility;frequency 50 kHz;low-voltage low-power circuit;mobility-based frequency reference;off-chip components;packaging;plastic packages;process spread;size 0.16 mum;temperature -55 degC to 125 degC;temperature 293 K to 298 K;thick-oxide MOS transistors;thin-oxide MOS transistors;voltage 1.2 V;wireless sensor networks;Accuracy;Ceramics;Oscillators;Plastics;Temperature distribution;Temperature measurement;Transistors.
    
    
    Abstract: ...

    In this paper, we explore the robustness of frequency references based on the electron mobility in a MOS transistor by implementing them with both thin-oxide and thick-oxide MOS transistors in a 0.16-µm CMOS process, and by testing samples packaged in both ceramic and plastic packages. The proposed low-voltage low-power circuit requires no off-chip components, making it suitable for applications requiring fully integrated solutions, such as Wireless Sensor Networks. Over the temperature range from -55 °C to 125 °C, its frequency spread is less than ±1% (3σ) after a one-point trim. Fabricated in a baseline 0.16-µm CMOS process, the 50 kHz frequency reference occupies 0.06 mm² and, at room temperature, its consumption with a 1.2-V supply is less than 17 µW.

22. A 200 µA Duty-Cycled PLL for Wireless Sensor Nodes in 65 nm CMOS
    Salvatore Drago; Domine M.W. Leenaerts; Bram Nauta; Fabio Sebastiano; Kofi A.A. Makinwa; Lucien J. Breems;
    {IEEE} J. Solid-State Circuits,
    Volume 45, Issue 7, pp. 1305 - 1315, July 2010. DOI: 10.1109/JSSC.2010.2049458
    
    Keywords: ...

    CMOS integrated circuits;UHF integrated circuits;frequency synthesizers;low-power electronics;phase locked loops;wireless sensor networks;CMOS technology;DCPLL circuit;current 200 muA;duty-cycled PLL;frequency 300 MHz to 1.2 GHz;frequency error;low-power high-frequency synthesizer;size 65 nm;voltage 1.3 V;wireless sensor networks;wireless sensor nodes;Batteries;CMOS technology;Energy consumption;Frequency synthesizers;Integrated circuit technology;Jitter;Oscillators;Phase locked loops;Phase noise;Wireless sensor networks;CMOS;PLL;WSN;duty-cycle;frequency stability;frequency synthesizer;fully integrated;ultra-low-power;wireless sensor networks.
    
    
    Abstract: ...

    The design of a duty-cycled PLL (DCPLL) capable of burst mode operation is presented. The proposed DCPLL is a moderately accurate low-power high-frequency synthesizer suitable for use in nodes for wireless sensor networks (WSN). Thanks to a dual loop configuration, the PLL's total frequency error, once in lock, is less than 0.25% from 300 MHz to 1.2 GHz. It employs a fast start-up DCO which enables its operation at duty-cycles as low as 10%. Fabricated in a baseline 65 nm CMOS technology, the DCPLL circuit occupies 0.19 x 0.15 mm² and draws 200 µA from a 1.3 V supply when generating bursts of 1 GHz signal with a 10% duty-cycle.

23. A 1.2-V 10-µW NPN-Based Temperature Sensor in 65-nm CMOS With an Inaccuracy of 0.2 °C (3σ) From -70 °C to 125 °C
    Fabio Sebastiano; Lucien J. Breems; Kofi Makinwa; Salvatore Drago; Domine M. W. Leenaerts; Bram Nauta;
    {IEEE} J. Solid-State Circuits,
    Volume 45, Issue 12, pp. 2591 - 2601, December 2010. DOI: 10.1109/JSSC.2010.2076610
    
    Keywords: ...

    CMOS integrated circuits;correlation methods;signal sampling;temperature sensors;CMOS;correlated double sampling;dynamic element matching;npn transistor;power 10 muW;size 65 nm;temperature -70 C to 125 C;temperature sensor;voltage 1.2 V;CMOS analog integrated circuits;CMOS process;Intelligent sensors;Sigma delta modulation;Temperature sensors;CMOS analog integrated circuits;sigma-delta modulation;smart sensors;temperature sensors.
    
    
    Abstract: ...

    An NPN-based temperature sensor with digital output has been realized in a 65-nm CMOS process. It achieves a batch-calibrated inaccuracy of (3σ) and a trimmed inaccuracy of (3σ) over the temperature range from -70 °C to 125 °C. This performance is obtained by the use of NPN transistors as sensing elements, the use of dynamic techniques, i.e., correlated double sampling and dynamic element matching, and a single room-temperature trim. The sensor draws 8.3 µA from a 1.2-V supply and occupies an area of 0.1 mm².

24. A 65-nm CMOS temperature-compensated mobility-based frequency reference for Wireless Sensor Networks
    Fabio Sebastiano; Lucien J. Breems; Kofi Makinwa; Salvatore Drago; Domine M. W. Leenaerts; Bram Nauta;
    In Proc. European Solid-State Circuits Conference,
    Sevilla, Spain, pp. 102 - 105, September14--16 2010. DOI: 10.1109/ESSCIRC.2010.5619792
    
    Keywords: ...

    CMOS integrated circuits;MOSFET;electron mobility;wireless sensor networks;CMOS temperature-compensated mobility;MOS transistor;current 42.6 muA;electron mobility;frequency 150 kHz;frequency reference;size 65 nm;temperature -55 C to 125 C;voltage 1.2 V;wireless sensor network;Accuracy;CMOS integrated circuits;Calibration;Oscillators;Temperature measurement;Temperature sensors;Wireless sensor networks.
    
    
    Abstract: ...

    For the first time, a temperature-compensated CMOS frequency reference based on the electron mobility in a MOS transistor is presented. Over the temperature range from -55 °C to 125 °C, its frequency spread is less than ±0.5% after a two-point trim and less than ±2.7% after a one-point trim. These results make it suitable for use in Wireless Sensor Network nodes. Fabricated in a baseline 65-nm CMOS process, the 150 kHz frequency reference occupies 0.2 mm² and draws 42.6 µA from a 1.2-V supply at room temperature.

25. A 1.2V 10µW NPN-based temperature sensor in 65nm CMOS with an inaccuracy of ±0.2°C (3σ) from -70°C to 125°C
    Fabio Sebastiano; Lucien J. Breems; Kofi Makinwa; Salvatore Drago; Domine M. W. Leenaerts; Bram Nauta;
    In International Solid-state Circuits Conference Digest of Technical Papers,
    San Francisco, CA, pp. 312 - 313, February7--11 2010. DOI: 10.1109/ISSCC.2010.5433895
    
    Keywords: ...

    CMOS integrated circuits;signal processing equipment;temperature sensors;CMOS technology;batch calibrated inaccuracy;current 8.3 �A;power 10 �W;size 65 nm;temperature -70 C to 125 C;temperature sensor;voltage 1.2 V;CMOS technology;Pipelines;Robustness;Sampling methods;Switches;Tail;Temperature sensors;Testing;Timing;Voltage.
    
    
    Abstract: ...

    A temperature sensor utilizing NPN transistors has been realized in a 65 nm CMOS process. It achieves a batch-calibrated inaccuracy of ±0.5°C (3σ) and a trimmed inaccuracy of ±0.2°C (3σ) from -70°C to 125°C The sensor draws 8.3 µA from a 1.2 V supply and occupies an area of 0.1 mm².

26. Automatic Common-mode Rejection Calibration
    Fabio Sebastiano; Lucien J. Breems; Raf Roovers;
    Patent, China 101809863 A, August 2010.

27. Method and system for impulse radio wakeup
    Fabio Sebastiano; Salvatore Drago; Lucien J. Breems; Domine M.W. Leenaerts;
    Patent, Europe 2206240 A2, July 2010.

28. Method and system for impulse radio wakeup
    Fabio Sebastiano; Salvatore Drago; Lucien J. Breems; Domine M.W. Leenaerts;
    Patent, China 101816130 A, August 2010.

29. Frequency synthesiser
    Salvatore Drago; Fabio Sebastiano; Domine M.W. Leenaerts; Lucien J. Breems; Bram Nauta;
    Patent, World 113108 A1, October 2010.

30. Frequency synthesiser
    Salvatore Drago; Fabio Sebastiano; Domine M.W. Leenaerts; Lucien J. Breems; Bram Nauta;
    Patent, Europe 2237418 A2, October 2010.

31. Impulse-Based Scheme for Crystal-Less ULP Radios
    Salvatore Drago; Fabio Sebastiano; Lucien J. Breems; Domine M.W. Leenaerts; Kofi A.A. Makinwa; Bram Nauta;
    {IEEE} Trans. Circuits Syst. {I},
    Volume 56, Issue 5, pp. 1041 - 1052, May 2009. DOI: 10.1109/TCSI.2009.2015208
    
    Keywords: ...

    access protocols;ad hoc networks;clocks;low-power electronics;modulation;ultra wideband communication;wireless sensor networks;ad hoc modulation;crystal-less ULP radio;crystal-less clock generator;duty-cycled wake-up radio;frequency 17.7 MHz;frequency 2.4 GHz;impulse radio;medium access control protocol;power 100 muW;ultra-low-power radio;wireless sensor network;Crystal-less clock;EDICS Category: COMM110A5, COMM200, COMM250A5;impulse radio;ultra-low power (ULP);wake-up radio;wireless sensor network (WSN).
    
    
    Abstract: ...

    This study describes a method of implementing a fully integrated ultra-low-power (ULP) radio for wireless sensor networks (WSNs). This is achieved using an ad hoc modulation scheme (impulse radio), with a bandwidth of 17.7 MHz in the 2.4 GHz-ISM band and a specific medium access control (MAC) protocol, based on a duty-cycled wake-up radio and a crystal-less clock generator. It is shown that the total average power consumption is expected to be less than 100 µW with a clock generator inaccuracy of only 1%.

32. A Low-Voltage Mobility-Based Frequency Reference for Crystal-Less ULP Radios
    Fabio Sebastiano; Lucien J. Breems; Kofi A.A. Makinwa; Salvatore Drago; Domine M.W. Leenaerts; Bram Nauta;
    {IEEE} J. Solid-State Circuits,
    Volume 44, Issue 7, pp. 2002 -2009, July 2009. DOI: 10.1109/JSSC.2009.2020247
    
    Keywords: ...

    CMOS integrated circuits;MOSFET;wireless sensor networks;CMOS technology;MOS transistor;crystal-less ULP radios;current 34 muA;electron mobility;frequency 100 kHz;low-voltage low-power circuit;low-voltage mobility-based frequency reference;size 65 nm;temperature -22 degC to 85 degC;temperature 293 K to 298 K;voltage 1.2 V;wireless sensor networks;CMOS technology;Circuits;Electron mobility;Energy consumption;Frequency synchronization;MOSFETs;Oscillators;Silicon;Temperature sensors;Wireless sensor networks;CMOS analog integrated circuits;Charge carrier mobility;crystal-less clock;low voltage;relaxation oscillators;ultra-low power;wireless sensor networks.
    
    
    Abstract: ...

    The design of a 100 kHz frequency reference based on the electron mobility in a MOS transistor is presented. The proposed low-voltage low-power circuit requires no off-chip components, making it suitable for application in wireless sensor networks (WSN). After a single-point calibration, the spread of its output frequency is less than 1.1% (3σ) over the temperature range from -22 °C to 85 °C . Fabricated in a baseline 65 nm CMOS technology, the frequency reference circuit occupies 0.11 mm² and draws 34 µA from a 1.2 V supply at room temperature.

33. A multi-bit cascade sigma-delta modulator with an oversampled single-bit DAC
    S.M. Kashmiri; K.A.A. Makinwa; L.J. Breems;
    In s.n. (Ed.), Proceedings of ICECS 2009,
    ICECS, pp. 49-52, 2009.

34. A multi bit cascaded sigma delta modulator with an oversampled single bit DAC
    S.M. Kashmiri; K.A.A. Makinwa; L.J. Breems;
    In s.n. (Ed.), Proceedings of International Conference on Electronics Circuits and Systems,
    ICECS, pp. 49-52, 2009.

35. A 200 µA duty-cycled PLL for wireless sensor nodes
    Salvatore Drago; Domine M.W. Leenaerts; Bram Nauta; Fabio Sebastiano; Kofi A.A. Makinwa; Lucien J. Breems;
    In Proc. European Solid-State Circuits Conference,
    Athens, Greece, pp. 132 - 135, September14--18 2009. DOI: 10.1109/ESSCIRC.2009.5325979
    
    Keywords: ...

    CMOS integrated circuits;UHF detectors;detector circuits;frequency synthesizers;low-power electronics;phase locked loops;wireless sensor networks;CMOS process;burst mode;current 200 muA;duty cycled PLL;frequency 1 GHz;low power frequency synthesizer;size 0.15 mm;size 0.19 mm;size 65 nm;voltage 1.3 V;wireless sensor nodes;Phase locked loops;Wireless sensor networks.
    
    
    Abstract: ...

    A duty-cycled PLL operating in burst mode is presented. It is an essential building block of a moderately accurate low-power frequency synthesizer suitable for use in nodes for wireless sensor networks. Once in lock, the PLL's frequency error is less than 0.1% (rms). Fabricated in a baseline 65 nm CMOS process, the PLL occupies 0.19 times 0.15 mm² and draws 200 µA from a 1.3-V supply when generating a 1 GHz signal with a duty cycle of 10%.

36. Automatic Common-mode Rejection Calibration
    Fabio Sebastiano; Lucien J. Breems; Raf Roovers;
    Patent, World 040697 A3, August 2009.

37. Power saving method and system for wireless communications device
    Salvatore Drago; Fabio Sebastiano; Domine M.W. Leenaerts; Lucien J. Breems;
    Patent, World 044368 A2, April 2009.

38. Method and system for impulse radio wakeup
    Fabio Sebastiano; Salvatore Drago; Lucien J. Breems; Domine M.W. Leenaerts;
    Patent, World 044365 A3, June 2009.

39. High-speed sigma-delta converters
    M. Bolatkale; L.J. Breems; K.A.A. Makinwa;
    s.n. (Ed.);
    ProRISC, , pp. 143-148, 2008.

40. Impulse Based Scheme for Crystal-less ULP Radios
    Fabio Sebastiano; Salvatore Drago; Lucien J. Breems; Domine M.W. Leenaerts; Kofi A.A. Makinwa; Bram Nauta;
    In Proc. IEEE International Symposium on Circuits and Systems,
    pp. 1508 - 1511, May18--21 2008. DOI: 10.1109/TCSI.2009.2015208
    
    Keywords: ...

    access protocols;ad hoc networks;clocks;low-power electronics;modulation;ultra wideband communication;wireless sensor networks;ad hoc modulation;crystal-less ULP radio;crystal-less clock generator;duty-cycled wake-up radio;frequency 17.7 MHz;frequency 2.4 GHz;impulse radio;medium access control protocol;power 100 muW;ultra-low-power radio;wireless sensor network;Crystal-less clock;EDICS Category: COMM110A5, COMM200, COMM250A5;impulse radio;ultra-low power (ULP);wake-up radio;wireless sensor network (WSN).
    
    
    Abstract: ...

    This study describes a method of implementing a fully integrated ultra-low-power (ULP) radio for wireless sensor networks (WSNs). This is achieved using an ad hoc modulation scheme (impulse radio), with a bandwidth of 17.7 MHz in the 2.4 GHz-ISM band and a specific medium access control (MAC) protocol, based on a duty-cycled wake-up radio and a crystal-less clock generator. It is shown that the total average power consumption is expected to be less than 100 µW with a clock generator inaccuracy of only 1%.

41. A Low-Voltage Mobility-Based Frequency Reference for Crystal-Less ULP Radios
    Fabio Sebastiano; Lucien J. Breems; Kofi A.A. Makinwa; Salvatore Drago; Domine M.W. Leenaerts; Bram Nauta;
    In Proc. European Solid-State Circuits Conference,
    Edinburgh, UK, pp. 306 - 309, September15--19 2008. DOI: 10.1109/ESSCIRC.2008.4681853
    
    Keywords: ...

    CMOS integrated circuits;MOSFET circuits;electron mobility;integrated circuit design;low-power electronics;mobile radio;wireless sensor networks;MOS transistor;crystal less ULP radios;electron mobility;frequency 100 kHz;low voltage mobility based frequency reference;off-chip components;one point calibration;size 65 nm;temperature -22 degC to 85 degC;voltage 1.2 V;wireless sensor networks;CMOS technology;Calibration;Circuits;Energy consumption;Frequency;Oscillators;Silicon;Temperature distribution;Temperature sensors;Wireless sensor networks.
    
    
    Abstract: ...

    The design of a 100 kHz frequency reference based on the electron mobility in a MOS transistor is presented. The proposed low-voltage low-power circuit requires no off-chip components, making it suitable for Wireless Sensor Networks (WSN) applications. After one-point calibration the spread of its output frequency is less than 1.1% (3σ) over the temperature range from -22 °C to 85 °C. Fabricated in a baseline 65-nm CMOS technology, the frequency reference occupies 0.11 mm² and draws 34 µA from a 1.2-V supply at room temperature.

42. On the Temperature Compensation of a Frequency Reference for Crystal-Less ULP Wireless Sensor Networks
    Fabio Sebastiano; Lucien J. Breems; Kofi A.A. Makinwa; Salvatore Drago; Domine M.W. Leenaerts; Bram Nauta;
    In Proc. ProRISC,
    Veldhoven, The Netherlands, pp. 306 - 309, September27--18 2008.
    
    Abstract: ...

    Each node in a Wireless Sensor Network (WSN) must be provided with a frequency reference to enable network synchronization and RF communication. As the nodes need to be small, cheap and energy efcient, a frequency reference suitable for WSN must show low power consumption and require no off-chip components. A reference based on electron mobility in a MOS transistor demonstrates such features. Its output frequency follows the temperature dependence of mobility, which, although large, is well dened and can be compensated for. It is shown that a temperature sensor with accuracy of only 0.6 °C can be employed for the temperature compensation and that the inaccuracy of a compensated mobility-based frequency reference due to temperature, process spread, voltage supply variations and noise can be as low as 1% on a wide temperature range, fitting radio architectures for WSN applications.

43. An IF-to-baseband sigma delta modulator for AM/FM/IBOC radio receivers with a 118 dB dynamic range
    P.G.R. Silva; K.A.A. Makinwa; J.H. Huijsing; L.J. Breems; R. Roovers;
    IEEE Journal of Solid State Circuits,
    Volume 42, Issue 5, pp. 1076-1089, 2007.

44. An 118dB CT IF-to-Baseband/spl sigma//spl Delta/Modulator for AM/FM/IBOC Radio Receivers (U-SP-2-I-ICT)
    P.G.R. Silva; K.A.A. Makinwa; J.H. Huijsing; L.J. Breems; R. Roovers;
    s.n. (Ed.);
    IEEE, , pp. 1-10, 2006.

45. Noise analysis of continuous-time /spl sigma// spl delta/modulators with switched-capacitor feedback DAC (U-SP-2-I-ICT)
    P.G.R. Silva; K.A.A. Makinwa; J.H. Huijsing; L.J. Breems;
    In s.n. (Ed.), Proceedings of the 2006 ISCAS Conference,
    IEEE, pp. 1-4, 2006.

46. An 8-bit, 4-Gsample/s Track-and-Hold in a 67GHz fT SiGe BiCMOS technology (U-SP-2-I-ICT)
    D. Smola; J.H. Huijsing; K.A.A. Makinwa; H. van der Ploeg; M. Vertregt; L.J. Breems;
    In Ch Enz; M Declercq; Y Leblebici (Ed.), Proceedings of the 32nd European Solid-State Circuits Conference, 2006. ESSCIRC 2006,
    IEEE, pp. 1-4, 2006.

47. A 110dB dynamic range continuous-time IF-to-baseband sigma-delta modulator for AM/FM/IBOC receivers (U-SP-2-I-ICT)
    P.G.R. Silva; L.J. Breems; K.A.A. Makinwa; J.H. Huijsing;
    In s.n. (Ed.), Proceedings of the 2006 ISCAS Conference,
    IEEE, pp. 1-4, 2006.

48. Ultra high-speed sampling track-and-hold amplifier in SiGe Bi-CMOS technology
    D. Smola; H. van der Ploeg; M. Vertregt; L. Breems; J.H. Huijsing; K.A.A. Makinwa;
    In s.n. (Ed.), Proceedings of the STW annual workshop on semiconductor advances for future electronics and sensors (SAFE 2005),
    Technologiestichting STW, pp. 295-298, 2005. Editor onbekend, WPM/STW.

49. A high resolution IF-to-baseband continious-time ¿¿ modulator for AM/FM/IBOC radio receiver
    P.G.R. Silva; L.J. Breems; K.A.A. Makinwa; J.H. Huijsing;
    In s.n. (Ed.), Proceedings of ProRISC 2005, 16th Annual Workshop on Circuits, Systems and Signal Processing,
    Dutch Technology Foundation, pp. 289-294, 2005. editors onbekend, sb.

50. High speed, wide band, digital RF receiver front-end system
    D. Smola; M. Vertregt; H. van der Ploeg; L.J. Breems; J.H. Huijsing; K.A.A. Makinwa; P.G.R. Silva; J.M.V. Misker; Q Sandifort; A Emmerik; {van Donselaar}, B;
    STW, Volume Progress report , 2004.

51. High speed, wide band, digital RF receiver front-end system
    D. Smola; M. Vertregt; H. van der Ploeg; L.J. Breems; J.H. Huijsing; K.A.A. Makinwa; P.G.R. Silva; J.M.V. Misker; Q Sandifort; A Emmerik; {van Donselaar}, B;
    STW, Volume Progress report , 2004.

52. A quadrature data-dependent DEM algorithm to improve image rejection of a complex sigma delta modulator
    L.J. Breems; EC. Dijkmans; J.H. Huijsing;
    IEEE Journal of Solid State Circuits,
    Volume 36, Issue 12, pp. 1879-1886, 2001.

53. A 1.8-mW CMOS Sigma-Delta modulator with integrated mixer for A/D conversion of IF siignals
    L.J. Breems; E.J. van der Zwan; J.H. Huijsing;
    IEEE Journal of Solid State Circuits,
    Volume 35, Issue 4, pp. 468-475, 2001.

54. Continuous-time sigma-delta modulation for A/D conversion in radio receivers
    L.J. Breems; J.H. Huijsing;
    Kluwer Academic Publishers, , 2001.

55. A Quadrature data-dependent DEM alogorithm to improve image rejection of a complex sigma delta Modular
    L.J. Breems; EC. Dijkmans; J.H. Huijsing;
    In Proceedings ISSCC 2001,
    IEEECircuits and Systems Society, pp. 48, 49-en 428, 2001.

56. Continuous-time sigma-delta modulation for IF A/D conversion in radio receivers
    L.J. Breems;
    PhD thesis, Delft University of Technology, 2001.

57. A low-power CMOS ED modulator for IF A/D conversion in GSM based receivers
    L.J. Breems; E.J. van der Zwan;
    In SAFE99: proceedings. ProRISC99: proceedings [CD-ROM],
    STW Technology Foundation, pp. 63-67, 1999.

58. A 1.8mW CMOS ED modulator with integrated mixer for A/D conversion of IF signals
    L.J. Breems; W.F. van der Zwan; C. Dijkmans; J.H. Huijsing;
    In ISSCC 1999: digest of technical papers,
    IEEE, pp. 52-53, 1999.

59. Design for optimum performance-to-power ratio of a continuous-time ED modulator
    L.J. Breems; W.F. van der Zwan; J.H. Huijsing;
    In {BJ Hosticka}; {G Zimmer}; {H Grünbacher} (Ed.), ESSIRC '99: proceedings,
    Editions Frontieres, pp. 318-321, 1999.

BibTeX support